一种错配层钴氧化合物热电薄膜光探测器

Misfit-layered cobalt oxide pyroelectric thin-film photodetector

Abstract

本发明提供一种错配层钴氧化合物热电薄膜光探测器,属于薄膜光探测器设备技术领域,所要解决的技术问题是提供一种通过在斜切氧化物单晶基底上生长一层c轴取向的错配层钴氧化合物热电薄膜所制成的光探测器,其技术方案是:它由斜切的氧化物单晶基片和c轴取向的错配层钴氧化合物热电薄膜组成,c轴取向的错配层钴氧化合物热电薄膜采用脉冲激光沉积技术或金属有机沉积技术生长在斜切的氧化物单晶基片上,在薄膜表面有两个用热蒸发、磁控溅射或脉冲激光沉积技术沉积在薄膜表面的电极,两个电极分别通过电极引线与电压信号输出端相连接。本发明提供的错配层钴氧化合物热电薄膜光探测器的优点是制备简单、成本低廉、响应波段宽、响应灵敏度高和响应时间快。
The invention provides a misfit-layered cobalt oxide pyroelectric thin-film photodetector, belongs to the technical field of thin-film photodetector equipment, and solves the technical problem of providing the photodetector which is manufactured by growing a layer of c-axially oriented misfit-layered cobalt oxide pyroelectric thin-film on a beveled oxide monocrystal substrate. The photodetector comprises a technical scheme that the photodetector consists of the beveled oxide monocrystal substrate and the c-axially oriented misfit-layered cobalt oxide pyroelectric thin-film, wherein the c-axially oriented misfit-layered cobalt oxide pyroelectric thin-film grows on the beveled oxide monocrystal substrate by adopting pulsed laser deposition technology or metal organic deposition technology; the thin-film surface is provided with two electrodes which are deposited on the thin-film surface by using thermal evaporation, magnetron sputtering or pulsed laser deposition technology; and the two electrodes are connected with an output end of a voltage signal through electrode lead wires respectively. The misfit-layered cobalt oxide pyroelectric thin-film photodetector provided by the invention has the advantages of simple preparation, low cost, wide response wave band, high response sensitivity and quick response.

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Patent Citations (1)

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    CN-1923751-AMarch 07, 2007昆明理工大学Fast response optical heat radiation induced voltage material, preparation method and application

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