一种合格晶粒分布图的生成方法和装置

Generation method and device of qualified crystal grain distribution pattern

Abstract

本发明提供了一种合格晶粒分布图的生成方法,包括如下步骤:获取针对同一片晶圆的探针测试结果和缺陷检测结果;设置第三坐标系,在所述第三坐标系中定义晶粒的探针测试结果分布区域,将缺陷检测结果转换到所述第三坐标系中;对于表示在所述第三坐标系中每一个晶粒所在的坐标位置,将探针测试的指示值与缺陷检测的指示值进行逻辑运算,得到该坐标位置最终的指示值;根据晶圆上的每一个晶粒的最终指示值确定该晶粒的显示方式并生成合格晶粒分布图。本发明还提供了一种合格晶粒分布图的生成装置。本发明方案可以很大程度上减少了人工操作,大大提高了晶圆测试和出货的效率和精确性。
The invention provides a generation method of a qualified crystal grain distribution pattern. The generation method comprises the following steps of: obtaining a probe test result and a defect detection result of the same wafer; arranging a third coordinate system, defining a probe test result distribution region of the crystal grains in the third coordinate system and converting the defect detection result into the third coordinate system; with regard to a coordinate position of each crystal grain in the third coordinate system, carrying out logical operation on an indication value of a probe test and an indication value of a defect detection to obtain a final indication value of the coordinate position; determining a display way of the grain crystal according to the final indication value of each crystal grain on the wafer and generating the qualified crystal grain distribution pattern. The invention also provides a generation device of the qualified crystal grain distribution pattern. According to the scheme provided by the invention, the manual operation can be reduced to a large extent, and efficiency and accuracy of the wafer test and delivery are greatly improved.

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